ScTa替代对高居里温度Bi3TiNbO9陶瓷特性的影响
Effects of ScTa Substitution on Properties of Bi3TiNbO9 High-Curie-Temperature Ceramics
(Sc,Ta)掺杂对Bi3TiNbO9基陶瓷性能的影响进行了研究。(Sc,Ta)改性极大地提高了 Bi3TiNbO基陶瓷的压电活性，降低了陶瓷的介电损耗。Bi3(Ti0.96Sc0.02Ta0.02)NbO9陶瓷的d33达到了12 pC/N，是Bi3TiNbO9基陶瓷中最高的，差不多是已报道的纯BTNO陶瓷的 d33值(~6pC/N)的2倍。介温曲线显示所有该类陶瓷的居里温度TC都超过900 C. Bi3Ti0.96Sc0.02Ta0.02NbO9陶瓷的机械品质因数Q，径向机电耦合系数kp分别为1270, 5%，加上其高的居里温度TC和稳定的压电特性，表明被(Sc,Ta)改性的Bi3TiNbO9基材料具有很好高温应用前景。
he effect of (Sc,Ta) doping on the properties of Bi3TiNbO9-based ceramics was investigated. The (Sc,Ta) modification greatly improves the piezoelectric activity of Bi3TiNbO9-based ceramics and significantly decreases the dielectric dissipation. The d33 of Bi3(Ti0.96Sc0.02Ta0.02)NbO9 was found to be 12 pC/N, the highest value among the Bi3TiNbO9-based ceramics and almost 2 times as much as the reported d33 values of the pure BTNO ceramics (~6pC/N). The dielectric spectroscopy shows that the TC for all the ceramics is higher than 900 C. The mechanical quality factor Q, planar coupling factor kp of Bi3Ti0.96Sc0.02Ta0.02NbO9 ceramic were found to be 1270, 5%, respectively, together with the high TC and stable piezoelectric properties, demonstrating that the (Sc,Ta) modified Bi3TiNbO9-based material a wonderful candidate for high temperature applications.
张家良、王春雷、盖志刚、赵明磊、苏文斌
材料科学物理学电子元件、电子组件
铋层结构铁电体压电陶瓷无铅高温应用
Bismuth layer-structured ferroelectricsPiezoelectric ceramicsLead freeHigh temperature application
张家良,王春雷,盖志刚,赵明磊,苏文斌.ScTa替代对高居里温度Bi3TiNbO9陶瓷特性的影响[EB/OL].(2013-02-26)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/201302-457.点此复制
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