BaF2掺杂对Ba0.99(Bi0.5Na0.5)0.01TiO3陶瓷介电常数和居里温度的影响

his study demonstrates the issue of BaF2 substitutions into barium titanate based ceramics. Analysis according to dielectric measurements is presented to aid interpretation the effect of BaF2-doping on dielectric property and Curie point movements. The dielectric permittivity decreased gradually to their minimum value and then sharply increased again with the increase of BaF2 contents. The relatively low dielectric loss of all samples indicated excellent ferroelectric properties. The effect of BaF2-doping on Curie point was very complex and obtained the maximum Curie point of 136℃, when BaF2 was doped in the molar ratios BaF2/BaTiO3 of 0mol%, 0.2mol% and 1.4mol%, respectively, and sintered at 1290℃ for 20min. Owing to the concentration of oxygen vacancies decreased with the increasing of F- ions concentration, the population of electrons as carrier in donor levels decreased and thus increased the electrical resisivity.