分段交错电极铌酸锂薄膜调制器
Integrated thin film Lithium niobate modulator with Segment interleaved electrode
铌酸锂薄膜调制器因为低损耗、高带宽、低半波电压特性,便于在硅基光子平台集成。在光通信和光电芯片集成领域有极高应用价值。论文针对铌酸锂薄膜调制器对低半波电压和高带宽的需求,提出了一种分段交错结构的行波电极,有效降低了微波损耗,进而降低了半波电压。论文仿真分析了基于该电极结构的MZM铌酸锂薄膜调制器,仿真结果表明,在0GHz时半波电压达到1.54V,40GHz时半波电压达到2V,带宽达到60GHz以上;相比同等条件下的传统GSG电极,在40GHz时半波电压降低了19.2%。
Integrated thin film Lithium niobate modulator is easy to integrate in silicon-based photonic platform because of its low loss, high bandwidth and low half-wave voltage characteristics.It has high application value in the field of optical communication and photoelectric chip integration.According to the requirements of low half wave voltage and high bandwidth, a segmented staggered traveling wave electrode is proposed, which effectively reduces the microwave loss and then the half wave voltage.The simulation results show that the half wave voltage reaches 1.54v at 0ghz, the half wave voltage reaches 2V at 40GHz and the bandwidth reaches more than 60GHz;Compared with the traditional GSG electrode under the same conditions, the half wave voltage is reduced by 19.2% at 40GHz.
姜冲、邱吉芳
光电子技术半导体技术微电子学、集成电路
铌酸锂调制器分段电极半波电压等效传输线
LiNbO3 modulatorSegmented electrodeHalf-wave voltageTransmission line analogy
姜冲,邱吉芳.分段交错电极铌酸锂薄膜调制器[EB/OL].(2022-04-06)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/202204-77.点此复制
评论