ZnO薄膜p型掺杂及同质p-n结的室温电致发光
ZnO p-type doping and room-temperature electro-luminescence from ZnO homojunction
本文系统地报道ZnO薄膜p型掺杂技术，其中包括N掺杂技术、共掺技术、Li掺杂技术、非故意掺杂技术、大尺寸失配元素掺杂技术等；在p型掺杂的基础上，实现ZnO同质p-n结室温电注入发光。
his article reports on several technique for p-type doping in ZnO thin films, including N-doping, co-doping, Li-doping, nominally undoped method, large-size-mismatched group-Ⅴ doping. In addition, room-temperature electro-luminescence has been observed in ZnO homojunction based on the p-type doping technique.
叶志镇、何海平、卢洋藩、曾昱嘉
物理学光电子技术半导体技术
ZnOp型掺杂发光二极管
ZnOp-type dopingLight emitting diode
叶志镇,何海平,卢洋藩,曾昱嘉.ZnO薄膜p型掺杂及同质p-n结的室温电致发光[EB/OL].(2007-07-25)[2025-08-04].http://www.paper.edu.cn/releasepaper/content/200707-461.点此复制
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