磷锗锌多晶合成过程的中间生成物研究

he formation of high melting point impurities readily occur during the synthesis process of ZnGeP2 using the two-zone vapor transport method, thus resulting in the reduction of the purity of polycrystals. Synthetic products at several important temperatures in the synthesis process of ZnGeP2 polycrystals were characterized by XRD and EDS analysis. The results show that the major intermediates are Zn3P2, ZnP2, and GeP. Improvements were made to the synthesis process based on these results, and integral, dense ZnGeP2 polycrystals were synthesized. XRD analysis indicated that high-purity, single-phase ZnGeP2 polycrystalline materials can be obtained after the improvements and it has laid a reliable foundation for the single crystal growth.