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在自动测试系统下调整闪存的参考阈值电压

JUSTING REFERENCE THRESHOLD VOLTAGE OF FLASH MEMORIES WITH ATE

中文摘要英文摘要

为了满足市场上日益增长的对大容量闪存的需求,厂商通常采用多值技术来大幅度提高存储密度。在闪存的前道测试中,阈值电压调整是重要的一环,它有助于提高产品的可靠性。本文介绍了阈值电压调整的原理,并基于自动测试系统给出了一种典型实现。通过编写和调试测试程序,借助系统中的参数测量和功能测试单元,并行地对多个芯片的阈值电压进行调整。该测试方法兼顾了测试的效率和精度,有助于在大规模量产测试中缩短测试时间以降低测试成本。

o satisfy the growing demand of market for high-volume flash memories, chip manufacturers usually adopt multi-level technology to increase the storage density. In the front-end testing of flash memories, threshold voltage trimming plays important role, and it helps enhancing the reliability of the product. In this article, the fundamentals of trimming is introduced and an implementation of trimming on ATE is proposed. Test program is developed and debugged to take advantage of parametric measurement unit and function test unit inside the system, and the threshold voltage trimming is performed on multiple chips parallelly. This implementation is of high efficiency and good accuracy, and is of reference significance to testing time & cost reduction in high-volume production test.

吴峰

微电子学、集成电路电气测量技术、电气测量仪器自动化技术、自动化技术设备

自动测试系统闪存阈值电压调整

automated test equipmentflash memorythreshold voltage trimming

吴峰.在自动测试系统下调整闪存的参考阈值电压[EB/OL].(2008-10-22)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/200810-561.点此复制

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