S波段单片低噪声放大器功率放大器设计方法探讨
S Band Monolithic LNA and PA Design Method Analysis
本文使用ADS仿真软件，采用0.5微米pHEMT工艺，通过对S波段单片低噪声放大器和功率放大器的设计，对设计方法进行了综合分析。在低噪声放大器设计中采用资用功率双向设计法，实现最佳噪声性能的同时确保较高的增益。在功率放大器设计上比较了Cripps负载线法和负载牵引法在的区别和特点。 本文为快速准确可行地进行射频单片微波放大器的计算机辅助设计提供了参考。
his paper demonstrates the design of S band Monolithic LNA and PA with ADS simulation tool. The design based on Triquint 0.5um TQPED pHEMT process. With power gain available design method and optimized NF match on LNA design to achieve a good NF performance and enough gain. Cripps load line method and Load-Pull method being compared during the design on class A power amplifier. This paper provides a good reference on MMIC amplifier fast and accurate design with CAD simulation tools.
莫亭亭、丁大峰
微电子学、集成电路电子电路无线电设备、电信设备
单片射频集成电路 单片低噪声放大器 功率放大器 ADS仿真软件 负载牵引法
RFMMIC Monolithic LNA Monolithic PA ADS Load-Pull
莫亭亭,丁大峰.S波段单片低噪声放大器功率放大器设计方法探讨[EB/OL].(2008-05-05)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/200805-44.点此复制
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