Bi2Sr2Co2Oy/Si 异质结的整流特性

Bi2Sr2Co2Oy/Si heterojunction has been obtained by growing a layer of p-type Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition, and its rectifying properties were studied in a wide temperature range from 20 to 300 K. The heterojuction exhibited a perfect rectifying characteristic and its transport mechanism under the forward bias can be attributed to a trap-filled limit conduction mechanism via the oxygen defects in the Bi2Sr2Co2Oy film and the interface defects of the heterojunction. The results demonstrated the potential application of a Bi2Sr2Co2Oy-based heterojunction in the electronic devices.