黑硅的表面态研究
he surface states of black silicon
黑硅以其奇特的光电性能在太阳能电池领域得到了广泛关注，本文采用在传统金字塔结构硅衬底上利用两步法刻蚀纳米线阵列的方法制备双减反射层黑硅，并在黑硅表面分别制备二氧化硅和二氧化硅氮化硅堆叠钝化层。利用SEM测试观察到黑硅表面整齐排列的金字塔结构及竖直的纳米线阵列。利用深能级瞬态谱技术区分黑硅样品的表面态和体缺陷，两种钝化方法的样品均存在三个体缺陷，其能级位置为距离价带顶0.46eV、0.35eV、0.20eV。两样品的表面态密度随能量分布，均处于1012 cm2eV数量级，两样品的表面态密度大小相差2×1012cm2eV左右。
Black silicon has been receiving a great deal of attention due to its interesting physical properties and promising potential technological applications in the field of solar cells. In this paper, p-type silicon samples were prepared with ultra-low reflectivity layers of pyramid and nanowires double structure arrays, and passivated by SiO2 and SiO2/SiNx stack respectively. SEM measurement showed the surface morphology of black silicon. From the DLTS measurement, surface states were distinguished from bulk traps. Three bulk traps were found in both samples, the energy level were 0.46eV, 0.35eV, 0.20eV above the top of valence band. The surface states density versus energy plots of both samples are in same distribution. The surface states density of black silicon passivated by SiO2 was 2×1012cm2eV higher than the one passivated by SiO2/SiNx stack.
邓彤、李永祥、刘爱民、李葛亮、窦智
半导体技术光电子技术能源动力工业经济
太阳电池黑硅钝化深能级瞬态谱表面态
solar cellsblack siliconpassivationDLTSsurface states
邓彤,李永祥,刘爱民,李葛亮,窦智.黑硅的表面态研究[EB/OL].(2013-04-11)[2025-07-25].http://www.paper.edu.cn/releasepaper/content/201304-258.点此复制
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