ITO电极与n-ZnO薄膜的欧姆接触特性
Properties of ITO ohmic contacts to n-ZnO
利用射频磁控溅射方法在n-ZnO薄膜上制备了厚度为100nm的铟锡金属氧化物（ITO）电极。为了降低ITO电极和n-ZnO薄膜之间的接触电阻，在高纯N2气体保护下，对样品在200℃、300℃和400℃温度下进行退火处理，时间为3min。而后进行I-V特性测试，结果表明退火前后样品都呈现出欧姆接触特性。再利用圆点型传输线模型(CTLM)，计算ITO电极与n-ZnO薄膜的接触电阻率，发现其接触电阻率存在规律变化。300℃退火后得到的样品具有最低的接触电阻率6.0×10-3Ωcm2。同时，利用原子力显微镜(AFM)和紫外分光光度计对ITO电极表面形貌和光透射特性进行了分析。
100nm thick Indium-Tin-Oxide (ITO) layer was deposited on n-ZnO by radio-frequency magnetron sputtering method. The samples were annealed at 200℃, 300℃ and 400℃ for 3 min in N2 in order to produce low-resistance ohmic contacts. Then the I-V curves were measured, all the as-deposited and annealed samples show an ohmic behavior. The specific resistances of the ITO contacts to n-ZnO were calculated with Circular transmission line model (CTLM), and they changed regularly. The lowest specific contact resistance was 6.0×10-3Ωcm2 of the sample annealed at 300℃. The Atomic force microscope (AFM) and Ultraviolet spectrophotometer were employed to characterize the morphology and the transmittance spectrum of ITO.
李万程、夏晓川、蔡旭浦、杜国同、宋力君
半导体技术电子元件、电子组件电工材料
欧姆接触接触电阻率射频磁控溅射ZnOITO
ohmic contactspecific contact resistanceradio-frequency magnetron sputteringZnOITO
李万程,夏晓川,蔡旭浦,杜国同,宋力君.ITO电极与n-ZnO薄膜的欧姆接触特性[EB/OL].(2012-01-19)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201201-738.点此复制
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