一种基于在p型氮化镓薄膜上原位生长n型氮化镓纳米线阵列构成的新颖紫外探测器

We successfully demonstrated a novel gallium nitride (GaN) nanowire (NW)/p-GaNhomojunction UV photodetector via in-situ grown vertical well-aligned (GaN) nanowires grown on p-GaN/sapphire by vapor-liquid-solid (VLS) process. The length of GaN nanowires was in the range of 2-3μm and the diameter was in the range 200-300 nm. The current-voltage curve of the homojunction demonstrates obvious rectifying diode behavior in a dark environment. Under UV light (365nm,mercury lamp), the current was almost 6 times larger than that in dark current at -1 V. Continuous measurements indicate the reproducibility and stability of this homojunctionphotodetector.