面向SiC高温集成电路的BJT工艺与性能仿真设计

High-temperature semiconductor devices have developed rapidly since the 1970s, and high-temperature semiconductor devices based on traditional silicon (Si) materials have gradually approached their theoretical limits in terms of performance. Silicon carbide (SiC) material is considered one of the most promising materials among third-generation semiconductor materials. Currently, most of the device simulations for this material at home and abroad focus on structural simulations, with less work done on process simulations. Based on mainstream semiconductor TCAD simulation software, this paper proposes a novel dual-emitter device structure model for 4H-SiC BJT devices. For the first time, the Sprocess tool is used to model the device process, simulating the actual device preparation process, including deposition, etching, epitaxial growth, photolithography, and other process steps, generating BJT devices layer by layer. Based on the process simulation, the high-temperature performance of the BJT device is tested, providing a theoretical basis for the subsequent actual production of 4H-SiC BJTs.