ZnO退火中存在的问题

ue to the urgent need of the opto-electronics, information technology, aerospace and other high-tech field to short wavelength light-emitting devices, ZnO and other wide band gap semiconductor material had become research hot spots around the world. During researching impurity activation of p-type ZnO doping, ohmic contacts and improving the quality of ZnO single-crystal, high-temperature annealing process is essential. At present, ZnO surface is bare during high-temperature annealing process. when the annealing temperature is high, ZnO surface will be decomposed; At the same time, ZnO structure, optical and electrical properties of ZnO had the different change law with the annealing conditions; In addition, Annealing at higher temperatures, the intrinsic defects of ZnO thin films will increase, which is disadvantage to realizing p-type ZnO doping.