超薄InGaAs应变层上多层InAs/InGaAs量子点的结构和光学性质研究
Structual and optical properties of multilayer quantum dots on ultra-thin InGaAs strained layer
本工作在GaAs基50nm InGaAs应变层上生长了六层InAs 量子点（QD）层，通过分析各层之间的应力状况，配合生长过程中的反射式高能电子衍射仪（RHEED）实时监测及生长后得到的表面形貌、测得的77K PL谱，发现应变层和衬底之间形成的位错对量子点的分布有导向作用，但是位错的存在严重影响了材料的光学性能。
Six layer InAs quantum dots (QDs) were grown on 50nm InGaAs strained layer. By analyzing the strain between different layers, combining real time inspection by reflection high-energy electron diffraction (RHEED) , the surface morphology measurement after growth, and the 77K PL, we found the dislocations formed between strained layer and substrate can affect the distribution of QDs, but the optical characteristic is damaged by the dislocations at the same time.
姚江宏、徐波、张春玲
物理学光电子技术半导体技术
量子点分子束外延应力PL谱
quantum dotsmolecular beam epitaxitystressPL spectra
姚江宏,徐波,张春玲.超薄InGaAs应变层上多层InAs/InGaAs量子点的结构和光学性质研究[EB/OL].(2010-12-20)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201012-721.点此复制
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