黑硅发展现状及其制备方法综述
review of the development status of black silicon and its preparation methods
黑硅是在硅晶圆表面制备的一种特殊微结构,其有着陷光的特性,可以使入射到硅表面后反射回去的光再次入射到硅材料中,以达到减小反射损耗的效果。黑硅广泛用于硅光电探测器在其响应波段的吸收增强上。用不同方法制备出的不同类型的黑硅结构,减反射率可得到不同程度的提升。良好的黑硅结构可以实现光的多次反射和入射,从而使减反射率提升到90%以上。本文主要概括了自1998年Eric Mazur团队首次发现黑硅以来,众多研究者关于黑硅的研究工作,并详细介绍了不同类型黑硅的产生机理与制备方法。
Black silicon is a special microstructure prepared on the surface of a silicon wafer. It has light-trapping properties, which can make the light reflected back after being incident on the silicon surface re-enter the silicon material to achieve the effect of reducing reflection loss. Black silicon is widely used to enhance the absorption of silicon photodetectors in their response wavelength bands. For different types of black silicon structures prepared by different methods, the anti-reflective properties can be improved to varying degrees. A good black silicon structure can achieve multiple reflections and incidences of light, thus increasing the anti-reflection rate to over 90%. This article mainly summarizes the research work of many researchers on black silicon since the first discovery of black silicon by Eric Mazur\'s team in 1998, and introduces in detail the production mechanism and preparation methods of different types of black silicon.
胡安琪、蔡子昱
光电子技术半导体技术
黑硅湿法腐蚀吸收增强陷光效应。
Black siliconWet etchingAbsorption enhancementLight trapping effect.
胡安琪,蔡子昱.黑硅发展现状及其制备方法综述[EB/OL].(2024-04-01)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/202404-19.点此复制
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