基于光滑化粒子流体动力学的特征尺寸级化学机械抛光研磨液颗粒悬浮流仿真

In this paper, the mechanisms of material removal in chemicalmechanical polishing (CMP) process are investigated in detail by thesmoothed particle hydrodynamics (SPH) method. The feature-scalebehaviours of slurry flow, rough pad, wafer defects, moving solidboundaries, slurry-abrasive interactions and abrasive collisions aremodeled and simulated. Compared with previous work on CMPsimulations, our simulations incorporate more realistic physicalaspects of the CMP process, especially the effect of abrasiveconcentration in the slurry flows. The preliminary results on slurryflow in CMP provide microscopic insights on the experimental data ofthe relation between the removal rate and abrasive concentration anddemonstrate that SPH is a suitable method for the research of CMPprocess.