Structural effect on the resistive switching behavior of triphenylamine-based poly[azomethine]s
Linear and hyperbranched poly(azomethine)s (PAMs)-based on tri- phenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Com- parably, the hyperbranched PAM with isotropic architecture and semi-crystalline nature shows enhanced memory behaviors with more uniform distribution of the HRS and LRS resistances.
Linear and hyperbranched poly[azomethine]s [PAMs]-based on triphenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Comparably, the hyperbranched PAM with isotropic architecture and se
Liu, G [Liu, Gang][ 1 ]、Wang, J [Wang, Jun][ 2 ]、Zhang, WB [Zhang, Wenbin][ 1,2 ]、Li, RW [Li, Run-Wei][ 1 ]、Chen, Y [Chen, Yu][ 3 ]、Wang, C [Wang, Cheng][ 3 ]
半导体技术
MEMORY DEVICESPOLYMERSPOLYAZOMETHINEMOIETIESCRYSTALLIZATIONCOPOLYMERTRANSPORTMOBILITYACCEPTORFILMS
Liu, G [Liu, Gang][ 1 ],Wang, J [Wang, Jun][ 2 ],Zhang, WB [Zhang, Wenbin][ 1,2 ],Li, RW [Li, Run-Wei][ 1 ],Chen, Y [Chen, Yu][ 3 ],Wang, C [Wang, Cheng][ 3 ].Structural effect on the resistive switching behavior of triphenylamine-based poly[azomethine]s[EB/OL].(2017-05-08)[2025-08-02].https://chinaxiv.org/abs/201705.00065.点此复制
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