反应溅射氮化铁纳米晶薄膜的霍耳效应
Hall effect of reactive sputtered iron nitride nanocrystalline films
采用反应溅射法制备氮化铁纳米晶薄膜。随着氮气流量的增加，薄膜中的主要相从α-Fe(N)转变为ξ-Fe2N，导电机制也从金属性向半导体特性转变。样品的霍耳电阻率随着氮气流量的增加先增加后减小，氮气流量为15 sccm时，霍耳电阻率约为61 μΩcm，比纯Fe膜大两个数量级。同时，正常霍耳系数和反常霍耳系数比纯Fe膜高两个数量级，比块体Fe高四个数量级，其机制为斜散射。
he iron nitride films were fabricated using reactive sputtering. With increasing the N2 flow rate (PN2), the dominant phases evolve from α-Fe(N) to ξ-Fe2N, and the conductance mechanism turns from metallic to semiconducting. The Hall resistivity (ρxy) first increases and decreases latterly with increasing PN2. The maximum ρxy is ~61 μΩcm at PN2=15 sccm, ~100 times larger than that of Fe films, and its ordinary and extraordinary Hall coefficients are enhanced by two orders compared with Fe films and four orders with bulk Fe. The mechanism of the present Hall effect follows skew scattering.
白海力、米文博、封秀平
物理学半导体技术冶金技术
材料物理与化学氮化铁薄膜霍耳效应
Materials Physics and ChemistryIron Nitrides FilmsHall Effects
白海力,米文博,封秀平.反应溅射氮化铁纳米晶薄膜的霍耳效应[EB/OL].(2011-02-21)[2025-08-23].http://www.paper.edu.cn/releasepaper/content/201102-476.点此复制
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