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基于LDMOS器件的F类功率放大器设计

esign of Class-F Power Amplifier Based on LDMOS Device

中文摘要英文摘要

本文设计了一种工作在1.8GHz的F类功率放大器,使用LDMOS晶体管作为有源器件以便产生高功率和高效率。F类放大器通过对不同的谐波进行调谐来峰化漏极电压和电流的波形,漏极电压波形包含一个或更多的奇次谐波可近似为方波,同时电流包含偶次谐波可近似为半个正弦波,来同时做到高输出功率和高效率。仿真证明该放大器可以达到12W以上的输出并且效率在70%以上超过同等输出功率的AB类放大器

he paper presents a design of Class-F power amplifier working at 1.8GHz,by using the LDMOS transistor as the active element in order to generate high output power and high efficiency.The Class-F power amplifier improves efficiency and output power by tuning for different harmonics to shape its drain-voltage and drain-current waveforms,the drain voltage approximates a square wave with one and more odd harmonics.At the same the drain current approximates a half sine wave with one and more even harmonics.The simulation shows that the amplifier achieved 12w output power and above 70% efficiency which is more than Class-AB amplifier at the same output power level.

曹建文、邓云飞、于洋、伊晓萌

电子电路微电子学、集成电路电子技术应用

高效率F类逆F类LDMOS晶体管功率放大器

High efficiencyclass-FInverse class-FLDMOS transistorpower amplifier

曹建文,邓云飞,于洋,伊晓萌.基于LDMOS器件的F类功率放大器设计[EB/OL].(2007-09-07)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/200709-122.点此复制

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