|国家预印本平台
首页|Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi two-dimensional electron system

Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi two-dimensional electron system

Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi two-dimensional electron system

来源:Arxiv_logoArxiv
英文摘要

In this work we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the $C_{2v}$ symmetry of the structure, which could be attributed to the formation of a quasi two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi two-dimensional structure with the QWR layer deposition thickness.

Yonghai Chen、Jinling Yu、Hui Ma、Chongyun Jiang、Yu Liu

10.1063/1.3596467

物理学光电子技术半导体技术

Yonghai Chen,Jinling Yu,Hui Ma,Chongyun Jiang,Yu Liu.Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi two-dimensional electron system[EB/OL].(2011-04-22)[2025-08-23].https://arxiv.org/abs/1104.4407.点此复制

评论