In2S3 /Cu(In,Ga)Se2的薄膜太阳能电池界面层的仿真
Simulation of In2S3 /Cu(In,Ga)Se2 thin-film solar cells with the interfacial layer
本文对使用In2S3缓冲层和NaχCu1-χIn5S8界面层的Cu(In,Ga)Se2薄膜太阳能电池的缓冲层与吸收层的界面做了相关研究，建立了模型，并使用AMPS -1D仿真软件仿真。详细分析了不同带宽的In2S3缓冲层和存在的NaχCu1-χIn5S8界面层对电池器件的影响。结果表明，In2S3的合适的带隙应该是在从2.6到2.9eV范围内，而不是2.1eV的纯β-In2S3。具有高Cu含量的NaχCu1-χIn5S8会导致器件性能的显著恶化，对于这些结果的具体机理我们做了详细的讨论。
he performance of Cu(In,Ga)Se2 solar cells with In2S3 buffer layers and NaχCu1-χIn5S8 interfacial layers between buffer and absorber layers has been modeled and simulated using the AMPS-1D simulation software. The influences of the different band gap of In2S3 and the presence of NaχCu1-χIn5S8 on the device performance are investigated in detail. The results suggest that the suitable band gap of In2S3 should be in the range from 2.6 to 2.9 eV as opposed to 2.1e V for pure β-In2S3, and NaχCu1-χIn5S8 with high Cu contents lead to the significant deterioration of device performance. The responsible mechanisms for these results are also discussed.
何俊、孙琳
能源动力工业经济
微电子学与固体电子学IGSAMPS-1DIn2S3NaχCu1-χIn5S8????
Microelectronics and Solid State ElectronicsCIGSAMPS-1DIn2S3NaχCu1-χIn5S8
何俊,孙琳.In2S3 /Cu(In,Ga)Se2的薄膜太阳能电池界面层的仿真[EB/OL].(2013-12-30)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201312-1118.点此复制
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