光催化辅助石墨烯低温制备的研究

As an attractive carbon-based material in the material field, graphene shows great scientific significance and great application potential due to its unique structure and physical and chemical properties. However, the high cost and high energy consumption brought by high temperature growth conditions limit the development of CVD graphene applications. This paper proposed a CVD method to prepare graphene films using CeO2/Al2O3@graphene as photocatalyst, CH4 as carbon source and Cu as growth substrate by designing a method using the photocatalytic conversion of carbon source in series with the CVD growth process. The effects of photocatalyst calcination conditions and CVD parameters on the growth of graphene films were studied; the photocatalysts and graphene films were characterized by FE-SEM, OM and Raman. The results showed that compared with the traditional CVD method, the growth temperature of graphene film can be significantly reduced, and the low temperature growth of graphene film can be achieved at 700 oC for 180 min. The prepared graphene has large area and high uniformity, which provides a new possibility for the preparation of graphene by atmospheric and low temperature CVD method.