Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-${V}_{TH}$ (LVT) state; ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; iii) the proposed design can be incorporated in a highly scaled vertical NAND FeFET string and the pass gate can be incorporated into the existing 3D NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.
Vijaykrishnan Narayanan、Suman Datta、Wanki Kim、Khandker Akif Aabrar、Rajiv Joshi、Kai Ni、Kwangsoo Kim、Zijian Zhao、Suhwan Lim、Shan Deng、Steven Soss、Zhouhang Jiang、Yi Xiao、Daewon Ha、Stefan Duenkel、Mohamed Mohamed、Kijoon Kim、Sven Beyer、Dominik Kleimaier、Sola Woo、Scott Meninger、Halid Mulaosmanovic、Shimeng Yu、Sharadindu Gopal Kirtania、Jongho Woo
半导体技术微电子学、集成电路
Vijaykrishnan Narayanan,Suman Datta,Wanki Kim,Khandker Akif Aabrar,Rajiv Joshi,Kai Ni,Kwangsoo Kim,Zijian Zhao,Suhwan Lim,Shan Deng,Steven Soss,Zhouhang Jiang,Yi Xiao,Daewon Ha,Stefan Duenkel,Mohamed Mohamed,Kijoon Kim,Sven Beyer,Dominik Kleimaier,Sola Woo,Scott Meninger,Halid Mulaosmanovic,Shimeng Yu,Sharadindu Gopal Kirtania,Jongho Woo.Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate[EB/OL].(2024-03-07)[2025-06-07].https://arxiv.org/abs/2403.04981.点此复制
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