椭偏技术在研究多孔低介电常数薄膜中的应用

Porous Low k material are promising candidates in applications such as intermetal dielectrics (IMD)in microelectronics. Not only optical constant and thickness of thin film can be got quickly by ellipsometry technology without destructivity, but also microstructure and Young’s Modulus of porous Low k thin films can be characterized. So ellipsometry technology are ued to study porous Low k thin films. In this paper, the research progress and trend of ellipsometry technology are summarized with emphases on basic principle and development, characterize microstructure , characterize Young’s Modulus. The future for the developments of ellipsometry technology are also proposed.