In0.5Ga0.5As/GaAs(001) 薄膜临界厚度的测量
Measurement of Critical thickness of In0.5Ga0.5As/GaAs(001) films
本文使用分子束外延(molecular beam epitaxy, MBE)设备在GaAs(001)衬底上生长了In0.5Ga0.5As量子点，制备过程中使用反射式高能电子衍射仪(high-energy electron diffraction, RHEED)实时监测样品表面形貌的演变过程。利用扫描隧道显微镜(Scanning Tunneling Microscopy, STM)得到了In0.5Ga0.5As量子点表面形貌的图像，计算分析了In0.5Ga0.5As薄膜S-K转变的临界厚度值。
In this paper, In0.5Ga0.5As quantum dots were fabricated on GaAs(001) by MBE. RHEED was applied to monitor surface morphology of In0.5Ga0.5As film during the growth. Surface features of In0.5Ga0.5As quantum dots were analysed by STM images. The paper discussed critical thickness of In0.5Ga0.5As film in S-K transition based on STM images and RHEED oscillation curves.
周清、刘珂、周勋、丁召、郭祥、罗子江
半导体技术
微电子学InGaAs量子点分子束外延高能反射式电子衍射仪S-K生长模式
Nano ElectonicsInGaAs QDMBERHEEDS-K mode
周清,刘珂,周勋,丁召,郭祥,罗子江.In0.5Ga0.5As/GaAs(001) 薄膜临界厚度的测量[EB/OL].(2013-01-18)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201301-857.点此复制
评论