磁控溅射制备非晶铟镓锌氧化物薄膜的电学性能研究

morphous indium- gallium- zinc oxide (a-IGZO) thin films were fabricated using mid-frequency AC magnetron sputtering deposition with variable oxygen flow rate and sputtering current. The influence of processing parameters on the electronic properties of the films was investigated by means of analyses of XRD and XRF, as well as Hall Effect measurement. The results show that all the samples are amorphous with compositions roughly equal to that of the target. The change of sputtering current had no significant effect on the electronic properties. But the carrier concentration of the samples exhibited an obvious change as the increase of the O2 flow rate, which slightly increased and then rapidly decreased. The samples with higher carrier concentration exhibited larger Hall mobility. The average transmission of the IGZO thin films deposited with large O2 flow rate is above 90%.