交替磁控溅射法制备SiC/ZnO纳米颗粒的微观结构及发光机理研究

SiC/ZnO nanocomposites have been successfully prepared by radio frequency alternate sputtering and annealed at N2 ambient. The result shows that the Luminescence and microstructural characteristics of SiC/ZnO nanocomposites have a great relation with the annealing temperature, the SiC thin layer aggregated to form SiC nanoclusters when the annealing temperature is 600℃. When the annealing temperature increased above 900℃, some of the SiC nanoclusters begun to change into β-SiC nanocrystals, the β-SiC nanocrystals were surrounded by a layer of SiOx (x<2) or SiO2 according to the FTIR spectrum. Films annealed at 750℃ exhibited strong UV PL band at around 381nm, blue-emission band at around 465nm and weak green-emission band at around 560nm. UV light originated from the near band edge (NBE) emission of ZnO; blue-emission band at around 465nm and green-emission band at around 560nm might due to the emission-center caused by the defect states of Si-O bands.