GaAs/Ge太阳电池电子辐射效应的移位损伤剂量分析

he concept of displacement damage dose is used to analyze the irradiation effects of 1.0, 1.8 and 11.5 MeV electrons on homemade GaAs/Ge solar cells. The non-ionizing energy loss (NIEL) for each electron is caculatedin GaAs cells, and then the corresponding displacement damage dose could be obtained. It is found that with the aid of displacement damage dose, the degradation of Pmax of GaAs/Ge solar cells induced by various energies could be characterized with a simple curve. The result of the approach is a determination of a single characteristic degradation curve for a cell technology, which is measured against displacement damage dose rather than fluence by means of a calculation of NIEL and relatively few experimental measurements. The end-of-life (EOL) cell performance for a particular mission can be read from the characteristic curve once the displacement damage dose for the mission has been determined.