ZnO薄膜晶体管的制备及电学特性表征

ZnO thin film is a wide band gap semiconductor material with high mobility, high transparency in the visible region of the spectrum and less light sensitive which are favorable for ZnO thin film transistor(TFT) apllication. ZnO TFT will have the widespread application prospects. In this paper, we introduced the processing of making ZnO TFT and characterised the electronic property. The results show the ZnO TFT with the ZnO as the active film, with SiO2 as the gate dielectric, had good gate voltage control property. The study of this paper is the foundation of ZnO TET investigation. It is benefit to study the properties of ZnO TFT and the affection of the proceeding conditions to the properties of ZnO TFT.