含氧缺陷的镍酸钐外延薄膜的电子相图研究
Electronic phase diagram of oxygen-deficient SmNiO3-δ epitaxial thin films
本文运用脉冲激光沉积方法，在多种氧分压（PO2）条件下，于（001）取向的铝酸镧（LaAlO3）衬底上制备了含氧空位的镍酸钐（SmNiO3-δ）外延薄膜。实验结果表明，随着氧分压从26Pa变化到0.5Pa，镍酸钐薄膜的金属-绝缘体相变温度（TMI）从350K逐渐向85K移动。TMI的降低可归因于面外的Ni-O-Ni键角随PO2降低而增大。同时，在PO2 > 3 Pa的条件下，可以在200K附近的绝缘相中进一步观测到电阻率的异常变化，这表明镍晶格的反铁磁序的发生。结合以上结果，本文绘制了含氧空位的镍酸钐薄膜的电子相图。
Epitaxial SmNiO3-δ thin films were fabricated under various oxygen partial pressures (PO2) on (001)-oriented LaAlO3 substrates by pulsed laser deposition method. Continuous control of the metal-insulator transition temperature (TMI) from 350 K to 85 K has been achieved by varying PO2 from 26 Pa to 0.5 Pa. The reduction of TMI can be attributed to the straightening out of the out-of-plane Ni-O-Ni bond angle due to the elongation of unit cell volume with decrease of PO2. When PO2 > 3 Pa, the resistivity anomalies around 200 K are observed in the insulating phase of strained SmNiO3-δ films, suggesting the onset of antiferromagnetic ordering of the Ni sublattices. Based on the results of the transport measurements, an electronic phase diagram of the oxygen deficient SmNiO3-δ films has been established in this work.
孙琳、陈斌杰、白伟、杨平雄、张媛媛、孙岩、唐晓东、向平华、段纯刚、钟妮、杨楠
物理学材料科学晶体学
物理电子学镍酸盐薄膜电子输运金属-绝缘体相变氧空位
Physical electronicsNickelate thin filmElectrical transportMetal-insulator transitionOxygen deficiency
孙琳,陈斌杰,白伟,杨平雄,张媛媛,孙岩,唐晓东,向平华,段纯刚,钟妮,杨楠.含氧缺陷的镍酸钐外延薄膜的电子相图研究[EB/OL].(2017-04-21)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/201704-306.点此复制
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