不同掺钠工艺对Cu(In,Ga)Se2薄膜电学、结构和形貌的影响

Incorporation of sodium into Cu(In,Ga)Se2(CIGS) thin films deposited on flexible substrate leads to a great improvement in the properties of CIGS. Different influences were found by using different sodium incorporation methods. In this work, CIGS was deposited on flexible polyimide (PI) substrate by three-stage process based on low-temperature deposition. Our research focuses on the impact of two different sodium incorporation methods, deposition of a sodium compound precursor and post-deposition treatment of a sodium compound, on electrical, structural and micrograph properties of CIGS thin film. X-Ray Diffraction (XRD) measurement shows that the interdiffusion of In-Ga is restrained, which exhibits a double-peak reflection pattern when sodium is available during the growth of CIGS. In addition, the growth of CIGS is affected due to sodium incorporation, which leads to a decreased grain size observed by means of Scanning Electron Microscopy (SEM).