高阻SiC单晶的氮离子注入研究
Nitrogen Ions Implantation of High Resistivity Silicon Carbide Single Crystal
使用离子注入工艺对高阻碳化硅单晶进行掺杂，对注入后的单晶表面形貌、晶体质量及电阻率进行了研究。使用SRIM软件模拟了注入深度为300nm条件下的氮离子分布情况，得到了相应的注入能量和剂量参数。完成离子注入后在1450℃、氮气气氛下进行退火激活，分析了退火前后材料特性的变化。使用范德堡法对激活后的单晶表面电阻率进行了测量，计算得到电阻率大小约为0.07Ω.cm，计算结果表明碳化硅注入N离子并经过退火后的激活率为10%。
In this paper, the surface morphology, crystal quality and resistivity of high resistance silicon carbide (SiC) single crystal after implantation were studied. The SRIM software was used to simulate the N ions distribution at an implantation depth of 300 nm, and the corresponding implantation energy and dose parameters were obtained. After the ion implantation was completed, annealing activation was performed at 1450 C under a nitrogen atmosphere,the change of material properties before and after annealing was analyzed. The surface resistivity of the activated single crystal is measured by van der Pauw\'s method, the calculated resistivity is about 0.07 Ω. cm. and the activation rate of SiC implanted with N-ion after annealing is estimated to be 10%.
梁红伟、夏晓川、付彦柯
半导体技术材料科学晶体学
微电子学与固体电子学范德堡离子注入碳化硅电阻率
Microelectronics and Solid-State Electronicsvan der Pauwion implantationSiCresistivity
梁红伟,夏晓川,付彦柯.高阻SiC单晶的氮离子注入研究[EB/OL].(2020-05-15)[2025-08-23].http://www.paper.edu.cn/releasepaper/content/202005-96.点此复制
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