金属-(n)AlGaN-GaN二维电子气的静电性质的一种求解方法
method for the solution of the electrostatic properties of metal-(n)AlGaN-GaN two dimensional electron gas
为了研究AlGaN-GaN二维电子气的静电性质，我们提出了一种简单而有效的方法能够同时确定费米能级高度和求解二维电子气以及导带底的分布。该方法的核心是利用从薛定谔方程和泊松方程分别推导出的两个不同的二维电子气面密度与费米能级的函数关系来确定费米能级。这个方法可以考虑氮化物的极化效应，适用于耗尽层近似成立和背景掺杂电荷可以忽略的情况。
o help explore the electrostatic properties of AlGaN-GaN two dimensional electron gas (2DEG), we present a simple and efficient method to determine the fermi level EF and solve 2DEG distribution and conduction band edge simultaneously, whose essence is to fix EF by two 2DEG sheet density vs. EF relations respectively deduced from Schrfdinger and Poisson equations. This method is applicable to the situation that depletion approximation holds and background doping charge can be omitted, and the polarization effects of nitrides can be combined.
张金风、郝跃
物理学半导体技术微电子学、集成电路
微电子学lGaN-GaN异质结二维电子气费米能级面密度
lGaN-GaN heterostructurestwo dimensional electron gasfermi levelsheet density
张金风,郝跃.金属-(n)AlGaN-GaN二维电子气的静电性质的一种求解方法[EB/OL].(2012-02-28)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201202-1064.点此复制
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