2~5μm中红外波段GaSb半导体材料研究进展

III-V group semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Among these materials, with characteristics that include high carrier mobility and a narrow band gap, gallium antimonide (GaSb) and GaSb-related semiconductors have been recognized as most suitable candidates for high-performance optoelectronics in the mid-infrared range. The performance of semiconductor devices, however, strongly dependent on the structure and optical properties of materals, so the GaSb materials research focus is to improve the quality of crystal, adjust the alloy composition, improve the luminous performance, etc. We reviewed the progress of GaSb material epitaxy, including GaSb related alloy materials and GaSb-based quantum well materials. The relationship between the physical properties of GaSb material and the structure of the material is discussed in order to obtain the optimal conditions for the epitaxial growth of GaSb base materials.