GaAs衬底-纳米线型pn结电学特性的理论分析

We theoretically analyze the electrical properties of GaAs substrate-nanowire p-n junction. The results show that GaAs nanowire-substrate p-n junction exhibits clear diode behavior which has been confirmed in some experiments. Increasing NWs doping concentration and diameter can enlarge the total current after the diode is conducted. These results constitute an important progress for experimental researches on nanowire-integrated devices.