准一维通道中的声电电流
coustoelectric current in a quasi-one-dimensional channel
利用分裂栅技术在GaAs/AlxGa1-xAs异质结中产生准一维电子通道，在20 K下，研究了准一维电子通道不同源漏电压时，源漏电流与分裂门负电压的关系。并且在极低温（0.352 K）条件下，观察到表面声波搬运电子通过准一维电子通道产生的声电电流。利用这一现象研究了叉指换能器的频率响应，得到差指换能器的共振频率。
Quasi-one-dimensional channel is defined is GaAs/Al0.3Ga0.7As heterojunction using split gate technology. We studied the relation between source drain current and the negative voltage of split gate with different source drain voltage applied to the quasi-one-dimensional channel at the temperature of T=20K. We observed the acoustoelectric current transported by surface acoustic wave through the qusi-one-dimensional at extremely low temperature(0.352K) and studied the frequency response of IDT according to the magnitude of acoustoelectric current and got the resonance frequency of IDT.
李文、李玲、张林、杨丽娟、康建锋、高洁
半导体技术微电子学、集成电路电子电路
分裂栅，声表面波，声电电流，叉指换能器
split gatesurface acoustic waveacoustoelectric currentinter-digital transducer
李文,李玲,张林,杨丽娟,康建锋,高洁.准一维通道中的声电电流[EB/OL].(2005-12-12)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/200512-250.点此复制
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