退火和铝吸杂对太阳能多晶硅性能的影响

nnealing and Al gettering were performed on upgraded metallurgical grade multicrystalline silicon (UMG multi-Si) wafers with a purity of 99.999%. The dislocation and grain boundaries of samples were characterized by optical microscopy and electron back scattering diffraction (EBSD), respectively. The minority carrier lifetime and resistivity of the Si wafers were measured using microwave photoconductance decay and four-point probe techniques, respectively. The results show that the number of dislocations in Si wafers reduced obviously after annealing and Al gettering for 2 hours at 600～1100 C. The proportion of Σ3 grain boundary increases. But the minority carrier lifetime and resistivity of the Si wafers after annealing decreases. However, the minority carrier lifetime and resistivity of the Si wafers after Al gettering increases firstly and then decreases with increasing of the annealing temperature. It is considered that the metal impurities determine electrical properties of UMG multi-Si wafers rather than dislocations and grain boundary. However, Al gettering can enhances the properties of Si wafers effectively and the optimal effect of Al gettering has been achieved at 800℃.