退火对MBE生长GaAs0.91Sb0.09晶体质量和发光特性影响研究
he influence of annealing on crystal quality and photoluminescence of GaAs0.91Sb0.09grown by MBE
采用MBE生长得到GaAs0.91Sb0.09合金材料，对GaAs0.91Sb0.09合金进行慢速热退火处理，利用XRD及变温PL谱对GaAs0.91Sb0.09晶体质量及发光特性的影响进行表征分析。对GaAs0.91Sb0.09合金40K时PL谱进行分峰拟合获得3种样品的局域能深度分别为26meV、31meV和35meV，退火处理使合金中As、Sb组分互扩散，合金局域能加深，但退火使GaAs0.91Sb0.09局域态发光比例降低，带边发光的比例提高。
he GaAs0.91Sb0.09 alloy was prepared by MBE, and thermal annealing treatment for MBE grown GaAs0.91Sb0.09 alloy was carried out. The crystal quality and luminescence properties of the grown GaAs0.91Sb0.09 alloy was characterized by XRD and temperature dependent photoluminescence spectra. The photoluminescence spectra for three GaAs0.91Sb0.09 alloy at 40K was fitted, and their local energy was 26 meV, 31meV and 35 meV respectively. The As and Sb components of the alloy are interdiffed after annealing treatment, and the local energy of the alloy is deepened at the same time. However, annealing treatment for GaAs0.91Sb0.09 alloy make the proportion of local state light emission reduced, and make the proportion of the band edge increased.
唐吉龙、高虹一、马晓辉、王登魁、冯源、李再金、贾慧民、李洋、王彪
晶体学半导体技术光电子技术
GaAs0.91Sb0.09分子束外延热退火光致发光局域态
GaAs0.91Sb0.09molecular beam epitaxythermal annealingphotoluminescencelocal state
唐吉龙,高虹一,马晓辉,王登魁,冯源,李再金,贾慧民,李洋,王彪.退火对MBE生长GaAs0.91Sb0.09晶体质量和发光特性影响研究[EB/OL].(2017-08-02)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201708-13.点此复制
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