MBE生长的I型GaAsSb/AlGaAs多量子阱结构及其局域态现象研究
Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy
本文通过分子束外延技术生长了GaAs0.92Sb0.08/Al0.2Ga0.8As多量子阱结构，并对该样品进行了变温和变激发光致发光(PL)光谱测试。从测试结果观察到，在40K-90K的变温光谱中处现了两个不同来源的发光峰。通过光谱中的带尾态现象和半峰宽随温度变化呈现倒"S"型等特点，判断位于低能端发光峰来源于载流子局域化(LE)发光。通过Varshni方程拟合证实位于高能端的发光峰为自由激子(FE)发光。且LE峰位随激光激发功率的的增加而出现蓝移。判断此现象是局域态能带填充效应造成的。之后结合载流子动力学对样品中的局域态现象进行了分析。
GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs was grown by molecular beam epitaxy. Temperature and excitation power dependent photoluminescence (PL) of the MQWs were investigated in detail. The PL spectra showed a unique emission evolution. Two competitive peaks were observed from 40 to 90 K in temperature dependent PL spectra. The peak located at low energy shoulder was confirmed to be localized states emission (LE) by the long tail and the inverted S-shaped emission band width obtained from the temperature dependent emission. The high energy side peak was confirmed to be free carrier emission by Varshni equation fitting. It is observed that the LE peak exhibited blue shift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. As a result, the localized states in GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs have been confirmed and explained by carrier dynamics.
王登魁、王晓华、高娴、魏志鹏、唐吉龙、陈锐、葛啸天、方铉、高虹一、牛守柱
物理学半导体技术光电子技术
GaAs0.92Sb0.08/Al0.2Ga0.8As多量子阱结构分子束外延光致发光载流子局域化现象
GaAs0.92Sb0.08/Al0.2Ga0.8As multiple quantum wellsMolecular beam epitaxyPhotoluminescenceLocalized states emission
王登魁,王晓华,高娴,魏志鹏,唐吉龙,陈锐,葛啸天,方铉,高虹一,牛守柱.MBE生长的I型GaAsSb/AlGaAs多量子阱结构及其局域态现象研究[EB/OL].(2016-12-02)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201612-54.点此复制
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