制备温度对BiFeO3薄膜结构及性能的影响
The effect of temperature on the structure and property of BiFeO3 thin film
阻变存储器是一类新型非易失性存储器，具有功耗低、读写快、保持特性好、可小型化等特点。本文主要研究了采用脉冲激光沉积（PLD）技术制备多晶BiFeO3阻变薄膜的工艺，针对不同基片温度条件对薄膜结晶质量、微观形貌和阻变性能的影响进行了系统的研究。结果表明，在550~750℃的温度范围内，BFO薄膜能够获得较为良好的结晶。采用650℃的基片温度可以获得较为平整的薄膜表面和致密的薄膜结构。同时，该薄膜具有优异的阻变性能。
Resistive Random Access Memory (RRAM) is a new kind of non-volatile memory. It has many advantages such as low power consumption, fast write/read, good retention and good scalability. Pulsed laser deposition method was used to fabricate multi-crystal BiFeO3 film. The effect of substrate temperature on the the crystallization quality, micro-structure and resistive switching property of BFO thin film was studied. The results reveal that well crystallized BFO film can be obtained at substrate temperature between 550 ℃ and 750 ℃. Meanwhile, flat, compact BFO film with excellent resistive switching property can be obtained at substrate temperature of 650 ℃.
孙翔宇、帅垚、罗文博
半导体技术材料科学微电子学、集成电路
BiFeO3薄膜基片温度阻变性能
BiFeO3 thin filmsubstrate temperatureresistive switching property
孙翔宇,帅垚,罗文博.制备温度对BiFeO3薄膜结构及性能的影响[EB/OL].(2017-04-21)[2025-08-18].http://www.paper.edu.cn/releasepaper/content/201704-274.点此复制
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