升华法制备SiC单晶及表征
Growth and characterization of silicon carbide by sublimation
石墨电极与SiC原料直接接触，通电后利用接触电阻及SiC颗粒间产生的电弧加热SiC粉源，采用升华法原理成功制备了SiC单晶材料。实验表明基板温度对SiC单晶生长有重要影响，当基板温度在2300~2600K之间时，随着基板温度的升高，生长晶体的尺寸增大，在2600K，获得了直径20mm的SiC单晶。利用X射线衍射和扫描电子显微镜对生长晶体进行了物相表征和表面形貌分析。探讨了温度对晶体生长速率的影响，并给出了该体系下的晶体生长速率公式。
Bulk silicon carbide (SiC) single crystal was fabricated by attaching abrasive SiC powder directly to graphite electrode. The substrate temperature was important to SiC crystal growth. When the temperature of substrate varied from 2300Kto 2600K with substrate temperature increase, the size of finally obtained SiC single crystal increased. At 2600K, the maximum size of SiC crystal, 2cm in diameter, was obtained. The effect of temperature to SiC single crystal growth rate and the growth kinetics were discussed. The phase composition and surface morphology was studied by xrd and sem respectively.
万隆、张洪磊、刘小磐、汪洋
晶体学材料科学
SiC单晶生长升华法生长速率表面形貌
crystal growth silicon carbide sublimation growth rate surface morphology
万隆,张洪磊,刘小磐,汪洋.升华法制备SiC单晶及表征[EB/OL].(2008-11-07)[2025-08-19].http://www.paper.edu.cn/releasepaper/content/200811-219.点此复制
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