铜与a-SiCOF介质相互作用的俄歇电子能谱表征
ES Characterization of interaction between copper film and a-SiCOF with low dielectric constant
低介电常数材料取代传统的氧化硅作为互连介质可以降低集成电路的互连延迟，非晶硅碳氧氟(a-SiCOF)是一种新型的超低介电常数材料。本文用等离子体化学气相淀积(PECVD)制备了低介电常数a-SiCOF薄膜。通过俄歇电子能谱研究了铜与a-SiCOF薄膜的相互作用。分析表明在Cu/a-SiCOF之间有一个明显的界面层，厚度约6-8纳米。界面层有化学反应发生。Cu/a-SiCOF界面914.7eV峰的出现表明在界面处有Cu2O形成，而917.83eV处的俄歇峰则可能对应CuO。本文结果对低介电常数a-SiCOF介质在集成电路中的工艺集成具有重要意义。
Replacing SiO2 by low-dielectric constant materials can reduce RC delay in integrated circuits. Amorphous SiCOF (a-SiCOF), a new ultra-low dielectric constant material, is synthesized by plasma enhanced chemical vapor deposition in this paper. Interaction between copper film and a-SiCOF layer is investigated using Auger Electron Spectroscopy (AES). The results indicate that an interfacial layer of about 6-8nm thickness exists, and some chemical reactions occur in the interfacial layer. The peak at 914.7eV results from the formation of Cu2O, and the peak at 917.83eV may be from CuO component in the interfacial.
陈玮、张卫、张剑云
微电子学、集成电路半导体技术电子元件、电子组件
低介电常数介质化学气相淀积铜互连俄歇电子能谱
low dielectric constant materials copper interconnect chemical vapor deposition，Auger Electron Spectroscopy (AES)
陈玮,张卫,张剑云.铜与a-SiCOF介质相互作用的俄歇电子能谱表征[EB/OL].(2003-11-10)[2025-08-06].http://www.paper.edu.cn/releasepaper/content/200311-16.点此复制
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