单晶硅生长过程中热场与凝固界面形状的对比研究

Global simulations of heat transfer in an industrial CZ-Si crystal growth furnace are carried out. The effects of solid conduction, melt convection, thermal radiation, as well as phase change at the crystal-melt interface are taken into account. During the crystal growth, the effect of crystal rod on heat transfer in the furnace and melt-crystal interface shape becomes stronger. With the Si crystal growing, the melt-crystal interface becomes flatter. The value of V/G (the ratio between the crystal pulling rate and the temperature gradient in the crystal at the melt-crystal interface) keeps basically stable.