等离子体增强原子层沉积生长N掺杂Cu2O 薄膜及其物性研究
Research on Growth and Properties of N-doped Cu2O film by Plasma Enhanced Atomic layer deposition
本文采用等离子体增强原子层沉积技术（PEALD）以NH3为掺杂源对Cu2O薄膜材料进行了N掺杂实验，并对N掺杂后的样品进行了X射线光电子能谱、原子力显微镜（AFM）、霍尔测量、紫外-可见吸收光谱等测试分析，研究了N掺杂对Cu2O薄膜表面形貌、光学及电学性质的影响。研究结果表明，通过XPS测试，表明我们利用PEALD技术生长出了N掺杂的Cu2O薄膜；发现在N掺杂后会引起晶格畸变，Cu2O薄膜的结晶质量下降，导致Cu2O薄膜表面粗糙度增大，起伏明显；N掺杂后Cu2O薄膜的带隙从2.70 eV增加到3.20 eV，吸收边变得陡峭；掺杂后载流子浓度为6.32*1019 cm-3，相比于未掺杂样品（5.77*1018 cm-3）提升了1个数量级。
We have growth nitrogen-doped Cu2O:N by Plasma enhanced Atomic layer deposition (PEALD). The N doped samples were analyzed by X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), Hall measurements and UV-Vis absorption spectra .The effects of nitrogen doping on surface morphology, optical and electrical properties of Cu2O films were studied. XPS test shows that we have grown N doped Cu2O film by PEALD. It was found that the N doped caused lattice distortion and the N-doped Cu2O thin film had more roughness than un-doped Cu2O film. The optical bandgap energy was enlarged from 2.7 to 3.2 eV, the absorbtion edge becomes abrupt and pronounced. The carrier concentration of the doped sample is 6.32*1019cm-3, which is enhanced by 1 orders of magnitude compared with undoped samples (5.77*1018 cm-3).
王晓华、王新伟、唐吉龙、王登魁、孙秀平、方铉、房丹、潘景薪、李微
物理学化学晶体学
等离子体增强原子层沉积N掺杂Cu2O薄膜NH3
PEALDN-doped Cu2ONH3
王晓华,王新伟,唐吉龙,王登魁,孙秀平,方铉,房丹,潘景薪,李微.等离子体增强原子层沉积生长N掺杂Cu2O 薄膜及其物性研究[EB/OL].(2017-08-03)[2025-08-05].http://www.paper.edu.cn/releasepaper/content/201708-18.点此复制
评论