MS-EXAFS 研究闪锌矿构型的GaP、GaAs 和GaSb半导体的结构
Zinc-blende Structural GaP, GaAs and GaSb Semiconductors studied by Multiple-scattering x-ray absorption fine structure
本文利用多重散射扩展x 射线吸收精细结构(MS-EXAFS)研究了闪锌矿构型的GaP、GaAs 和GaSb 半导体化合物中的多重散射效应对Ga 原子的最近邻配位原子的依赖性。结果表明,随着Ga 的最近邻配位原子从P 到As 和Sb,多重散射贡献有较大的增强。前三个壳层的多重散射效应主要由一条双重散射路径DS2 (Ga0→B1→B2→Ga0)决定,其EXAFS信号与第二壳层单散射路径(SS2)的信号干涉相消。GaP 中Ga 的最近邻配位原子为轻元素P,其多重散射贡献相对SS2 的EXAFS 信号可以忽略。GaAs(或GaSb)中Ga 的最近邻配位原子为较重的元素As(或Sb),其DS2 路径则有很强的EXAFS 信号。在此基础上,我们提出一种优化的多重散射EXAFS 方法,适用于分析具有类闪锌矿构型的III-V 族半导体的高壳层局域结构。
he dependence of multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) effects on the nearest neighbors for GaP, GaAs and GaSb semiconductors with zinc blende structure has been investigated in this work. The overall MS contributions increase rapidly as the nearest neighbors around Ga atoms going from P to As and Sb. The MS effects within the first three coordination shells are dominated by a triangle double-scattering path DS2 (Ga0 B1 B2 Ga0) which contributes an EXAFS signal destructively interfering with that of the second shell single-scattering path (SS2). For GaP with a light element as the first neighbor, its MS contributions are negligible with respect to the SS2 contribution. For GaAs (or GaSb) with a heavier element As (or Sb) as the first neighbor, the MS path of DS2 produces a strong EXAFS oscillation. Based on these results, we present an optimized and simplified MS-EXAFS method for analyzing the higher shell local structure of III-V semiconductors with zinc blende-like structure.
韦世强、Zhihu Sun
物理学半导体技术晶体学
多重散射扩展x 射线吸收精细结构(MS-EXAFS),局域结构,III-V 族半导体
MS-EXAFS local structure III-V semiconductors
韦世强,Zhihu Sun.MS-EXAFS 研究闪锌矿构型的GaP、GaAs 和GaSb半导体的结构[EB/OL].(2005-11-29)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/200511-426.点此复制
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