GaAs纳米线轴向pn结阵列的电学特性研究

ifferent from the planar material growth, the bottom-up grown semiconductor nanowire can effectively release strain results from lattice mismatch between different materials, thus can be used to fabricate axial or radial heterostructures. And nanowire p-n junction is building block of most electronic and photoelectronic devices based on nanowire, study of nanowire p-n junction properties thus be of great importance. In present work, axial GaAs p-n junction arrays were grown, planarization of samples were realized with polyimide, I-V curves were then measured and analyzed. The clear rectifying behavior indicates a reliable growth and characterization of nanowire p-n.