单斜晶相HfO2电子结构与光学性质的第一性原理计算
First-Principles Calculation of Electronic Structure and Optical Properties of m-HfO2
利用密度泛函理论框架下的第一性原理平面波超软赝势方法计算了单斜晶相二氧化铪(m-HfO2)的电子结构,得到了m-HfO2的总态密度、分波态密度和能带结构。经带隙校正后,计算了m-HfO2的光学线性响应函数随光子能量的变化关系,包括复介电函数、反射率、复折射率以及光学吸收系数。经比较发现,计算结果与已有的实验数据符合得很好。
he electronic structures of m-HfO2 are calculated by using first-principles ultra-soft preudopotential approach of the plan wave based upon the density function theory. The total density of state and partial density of states as well as the band structure of m-HfO2 was presented. With band gap correction, the optical linear response functions of m-HfO2 as a function of photon energy were derived including the dielectric functions, reflection spectra, refractive index and optical absorption coefficient. The theoretical results are in good agreement with the experimental values.
刘正堂、冯丽萍
物理学晶体学光电子技术
光电材料m-HfO2电子结构密度泛函理论第一性原理
Optoelectronic materialsm-HfO2Electronic structureDensity function theoryFirst-principles
刘正堂,冯丽萍.单斜晶相HfO2电子结构与光学性质的第一性原理计算[EB/OL].(2012-02-28)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201202-1049.点此复制
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