基于InSe/PbS范德华异质结的高性能光电探测器

In the past few years, van der Waals heterostructures composed of two-dimensional layered materials have received widespread attention in the research and development of optoelectronic detection devices. Compared to traditional thin film materials, two-dimensional materials can be freely stacked and combined without being limited by lattice matching problems, making it possible to directly construct longitudinal van der Waals heterostructures through transfer methods. On this basis, researchers began to explore new ways to combine the excellent physical and chemical properties of traditional thin film materials with the advantages of two-dimensional material stacking. Traditional lead salt materials have once again been favored by researchers due to their suitable band structure and excellent light absorption characteristics, and have shown great potential in the field of van der Waals heterojunction photodetectors. On the basis of this idea, high-quality PbS nanosheets were grown using van der Waals epitaxy technology, and a PbS/InSe 3D/2D mixed dimensional van der Waals heterojunction photodetector was successfully constructed on the substrate electrode using dry transfer technology. The peak detection rate of up to 3.35 x 10 ^ 12 Jones and the high light switching ratio of 2.8 x 10 ^ 4 were achieved.