SiC衬底GaN基蓝光LED理想因子研究
Research on the ideality factor of GaN blue light-emitting diodes on SiC substrate
使用MOCVD系统在6H-SiC衬底上生长了GaN/InGaN量子阱结构蓝光LED外延片。在20mA电流下样品的正向电压为3.5V，中心发光波长为452nm。通过I-V特性曲线测试获得理想因子为7.8，分析了其理想因子偏大的原因。同时通过对不同温度下I-V特性曲线变化规律的分析，研究了温度对理想因子的影响。
光电子技术半导体技术
MOCVDSiC衬底LED理想因子
申人升,杨德超,房硕,张赫之,宋世巍,柳阳,杜国同,梁红伟.SiC衬底GaN基蓝光LED理想因子研究[EB/OL].(2012-02-29)[2025-10-24].http://www.paper.edu.cn/releasepaper/content/201202-1109.点此复制
We have grown InGaN/GaN multiquantum-well blue light-emitting diodes on 6H-SiC substrate by MOCVD system. At 20mA current,the forword voltage is 3.5V and the wavelength is 452nm.The ideality factor of GaN LED on SiC substrate is 7.8 at the room temperature by I-V characteristic of the sample.The origin of the high diode-ideality factors in GaN LED on SiC substrate light-emitting diodes have analyzed.We have studied characteristics of various ideality factors over different temperature.
MOCVDSiC substrateLEDideality factor
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