lGaN/GaN HEMT器件的高温小信号模型分析

Based on the superior characteristics of GaN materials, such as high temperature resistance and radiation resistance, compared with Si materials, GaN is more suitable for applications in the fields of aerospace and space exploration. In this paper, the S parameters of AlGaN/GaN High Electron Mobility Transistor (HEMT) under different operating temperatures are tested,and extract the small signal model parameters of the device. Obtain the parameter changes of the small-signal equivalent high-temperature circuit model of AlGaN/GaN HEMT devices. The results show that temperature has a great influence on the DC characteristics of the device and the small-signal model, so the small-signal modeling at high temperature is still essential.